Author:
Song S.C.,Luan H.F.,Lee C.H.,Mao A.Y.,Lee S.J.,Gelpey J.,Marcus S.,Kwong D.L.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Electrical and reliability characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal processing in N2O;Hwang,1990
2. Inversion layer mobility under high normal field in nitrided-oxide MOSFETs;Hori;IEEE Trans. Electron. Devices,1990
3. N2O oxidation kinetics of ultra thin thermally grown silicon nitride;Mao,1999
4. Evidence that N2O is a stronger oxidizing agent than O2 for post deposition annealing of Ta2O5 on Si capacitors;Lau;Jpn. J. Appl. Phys.,1997
5. Physical model of boron diffusion in ultra thin gate oxides;Fair;J. Electrochem. Soc.,1997
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献