Modeling and simulation of membrane distortions in Next Generation Lithography (NGL) masks-Reference-Cited by-同舟云学术

Modeling and simulation of membrane distortions in Next Generation Lithography (NGL) masks

Published:1999-05 Issue:1-4 Volume:46 Page:23-26
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Engelstad R.,Lovell E.,Dicks G.,Fisher A.,Tejeda R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Pattern transfer on mask membranes

2. Stability and stiffness characteristics of the national x-ray mask standard

3. R. Tejeda, G. Frisque, R. Engelstad, E. Lovell, E. Haugeneder and H. Löschner, these proceedings.

4. R. Tejeda, R. Engelstad, E. Lovell, E. Haugeneder and H. Löschner, these proceedings.

5. G. Dicks, R. Engelstad, E. Lovell and J. Liddle, these proceedings.

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1. Theoretical Analysis on Mechanical Deformation of Membrane-Based Photomask Blanks;Japanese Journal of Applied Physics;2012-04-03

2. Theoretical Analysis on Mechanical Deformation of Membrane-Based Photomask Blanks;Japanese Journal of Applied Physics;2012-04-01

3. Study of x-ray lithography mask distortion during electron-beam writing;SPIE Proceedings;2008-10-10

4. Investigation of multilayer structural changes in phase and amplitude-defects correction process;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005

5. Bibliography (1994–2004) of other topics;Modelling and Simulation in Materials Science and Engineering;2004-12-08