Transient effects in PD SOI NMOSFETs-Reference-Cited by-同舟云学术

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Transient effects in PD SOI NMOSFETs

Published:2001-11 Issue:1-4 Volume:59 Page:469-473
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Okhonin S,Nagoga M,Sallese J.-M,Fazan P,Faynot O,Pontcharra J,Cristoloveanu S

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Proceedings of ESSDERC’99;Shahidi,1999

2. Physics and characterization of transient effects in SOI transistors

3. Ph.D. dissertation;Flatresse,1998

4. Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Innovating SOI memory devices based on floating-body effects;Solid-State Electronics;2007-10

2. Transient effects in PD SOI MOSFETs and potential DRAM applications;Solid-State Electronics;2002-11

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