Process and equipment simulation of dry silicon etching in the absence of ion bombardment-Reference-Cited by-同舟云学术

Process and equipment simulation of dry silicon etching in the absence of ion bombardment

Published:1999-08 Issue:4 Volume:45 Page:377-391
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Otto T.,Wolf H.,Streiter R.,Dehoff A.,Wandel K.,Gessner T.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

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