Low temperature rapid thermal low pressure chemical vapor deposition of 〈111〉 oriented TiN layers from the TiCl4NH3H2 gaseous phase-Reference-Cited by-同舟云学术

Low temperature rapid thermal low pressure chemical vapor deposition of 〈111〉 oriented TiN layers from the TiCl4NH3H2 gaseous phase

Published:1997-11 Issue: Volume:37-38 Page:421-425
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Bouteville A.,Imhoff L.,Remy J.C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Growth and properties of LPCVD titanium nitride as a diffusion barrier for silicon device technology;Sherman;J. Electrochem. Soc.,1990

2. Thin film properties of low pressure chemical vapor deposition TiN barrier for Ultra Large Scale Integration applications;Hegde;J. Vac. Sci. Technol. B,1993

3. L. Imhoff, A. Bouteville, J.C. Remy, Kinetics of the formation of titanium nitride layers by RTLPCVD from TiCl4NH3H2, submitted for publication.

4. Thermodynamics of the formation of TiN from TiCl4NH3H2 on a patterned oxidized silicon substrate;Bouteville;J. Electrochem. Soc.,1996

5. Conformal chemical vapor deposition TiN (111) film formation as an underlayer of Al for highly reliable interconnects;Kaizuka;Jpn. J. Appl. Phys.,1994

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1. Optimal deposition conditions of TiN barrier layers for the growth of vertically aligned carbon nanotubes onto metallic substrates;Journal of Physics D: Applied Physics;2009-04-30

2. Fabrication of low-resistivity and gold-colored TiN films by halide chemical vapor deposition with a low [NH3]/[TiCl4] flow ratio;Thin Solid Films;2007-11

3. Structural, electrical, optical, and photoelectrochemical properties of thin titanium oxinitride films (TiO2−2xNx with 0⩽x⩽1);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-11

4. Low temperature, fast deposition of metallic titanium nitride films using plasma activated reactive evaporation;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2005-05

5. Influence of nitrogen content on properties of direct current sputtered TiOxNy films;physica status solidi (a);2004-01