Dry etch improvements in the SOI wafer flow process for IPL stencil mask fabrication-Reference-Cited by-同舟云学术

Dry etch improvements in the SOI wafer flow process for IPL stencil mask fabrication

Published:2000-06 Issue:1-4 Volume:53 Page:609-612
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Letzkus F.,Butschke J.,Höfflinger B.,Irmscher M.,Reuter C.,Springer R.,Ehrmann A.,Mathuni J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. SOI Wafer Flow Process for Stencil Mask Fabrication;Butschke,1998

2. Dry Silicon Etching for MEMS;Bhardwaj,1997

3. M. Irmscher et al., “Comparative Evaluation of E-Beam Sensitive Singlelayer TSI and Bilayer Carl Process for Stencil Mask Making” EIPBN 99, Marco Island, USA, June 1–4.

4. PN and SOI Wafer Flow Process for Stencil Mask Fabrication;Letzkus,1998

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