Imaging results for resist films exposed to EUV radiation-Reference-Cited by-同舟云学术

Imaging results for resist films exposed to EUV radiation

Published:2002-07 Issue: Volume:61-62 Page:723-728
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Ryoo Manhyoung,Shirayone Shigeru,Yano Ei,Okazaki Shinji,Kang Sujin

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Top-surface imaging resists for EUV lithography

2. Ultrathin photoresists for EUV lithography

3. Pattern transfer of sub-100-nm features in polysilicon using a single-layer photoresist and extreme ultraviolet lithography

4. Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation

5. Photoresist film thickness for extreme ultraviolet lithography

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