A three-dimensional TLM simulation method for thermal effect in high power insulated gate bipolar transistors-Reference-Cited by-同舟云学术

A three-dimensional TLM simulation method for thermal effect in high power insulated gate bipolar transistors

Published:2003-03 Issue:3 Volume:65 Page:293-306
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Hocine R.,Boudghene Stambouli A.,Saidane A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Calculations from data compiled on currently available IGBT’s listed on the International Rectifier Company website. (http:\\www.irf.com), November, 1999.

2. T.Y. Lee, Design optimisation of an integrated liquid-cooled IGBT power module using CFD technique, Proc. Sixth Annual Conference on Thermal and Thermo-mechanical Phenomena in Electronic Systems (ITherm), Seattle, pp. 337–342, May 1998.

3. D. Jech, J. Sepulveda, Advanced Copper Refractory Metal Matrix Composites for Packaging heat sink Applications, International Symposium on Micro-electronic, pp. 90–96, 1997.

4. MSC.PATRAN, complete software environment for simulation, (http://www.mscsoftware.com.au/).

5. ANSYS FLOTHERM, Ansys Inc, (http://www.ansys.com).

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