Author:
Brainard Robert L.,Barclay George G.,Anderson Erik H.,Ocola Leonidas E.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Resolution capability of each NGL technology came from the following references. EUV: D. O’Connell et al., EUV Workshop, 2000. X-Ray; L. Ocola et al., XEL Workshop 1995. EPL; Nikon, 2001 NGL Workshop. EBDW; H. Namatsu et al., EIPBN, 2001. IPL; R. Kaesmaier, H. Loschner, 2001 NGL Workshop.
2. Characterization of Shipley's positive deep-UV experimental resists: deblocking studies
3. Dissolution rate properties of three-component deep-ultraviolet positive photoresists
4. Development of positive electron-beam resist for 50 kV electron-beam direct-writing lithography
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