Study on the cleaning of silicon after CMP in ULSI-Reference-Cited by-同舟云学术

Study on the cleaning of silicon after CMP in ULSI

Published:2003-04 Issue:1-4 Volume:66 Page:433-437
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Liu Yuling,Zhang Kailiang,Wang Fang,Han Yunpeng

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Wafer cleaning;Hattori;J. Electrochem. Soc.,1998

2. Brush scrubbing emerges as future wafer-cleaning technology;Hymes;Solid State Technol.,1997

3. H. Gu, A study of the mechanism and removal techniques of the particle contamination on Si wafer in ULSI. Hebei University of Technology master’s degree dissertation, Tianjin, 2001.

4. Investigation on adsorption state of surface adsorbate on silicon wafer;Liu;Rare Metal,1999

5. Study on controlling the adsorption state of particle on the polished silicon wafer;Zhang,2001

Cited by 51 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Roughness control in the processing of 2-inch polycrystalline diamond films on 4H-SiC wafers;Materials Science in Semiconductor Processing;2024-12

2. Composite surfactant based on AEO and ADS for colloidal silica particles removal in post CMP cleaning of copper interconnection;Materials Science in Semiconductor Processing;2023-09

3. Effect of Silicon Wafer Surface Stains on Copper-Assisted Chemical Etching;Metals;2023-04-11

4. Effect of silicon wafer surface stains on copper-assisted chemical etching;2022-12-21

5. Chemical Mechanical Polishing of Nanocrystalline Diamond;Topics in Applied Physics;2019