Challenge of ashing and cleaning on SiOC-H dielectric: characterization and main issues-Reference-Cited by-同舟云学术

Challenge of ashing and cleaning on SiOC-H dielectric: characterization and main issues

Published:2002-07 Issue: Volume:61-62 Page:867-874
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Louveau O.,Louis D.,Assous M.,Blanc R.,Brun P.,Lamy S.,Lajoinie E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Wet or plasma clean ? A dual damascene study with SiOC-H dielectric on Cu wiring;Louis,2001

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3. Investigation of substrate effects in chemically amplified resists;Mori;Proc. SPIE,1996

4. Progress in qualifying and quantifying the airborne base sensitivity of modern chemically amplified DUV photoresists;A Kinkead;J. Photopolym. Sci. Technol.,1998

5. Specific behaviour of chemically amplified systems with low activation energy under electron-beam exposure: implementation of 248 and 193 nm resists;Mortini;J. Vac. Sci. Technol. B,1997

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