Emerging wafer bonding technologies-Reference-Cited by-同舟云学术

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Emerging wafer bonding technologies

Published:2020 Issue: Volume: Page:627-639
ISSN:
Container-title:Handbook of Silicon Based MEMS Materials and Technologies
language:
Short-container-title:

Author:

Dragoi Viorel,Flötgen Christoph,Burggraf J.,Oggioni Laura,Suga Tadatomo

Publisher

Elsevier

Reference40 articles.

1. Influence of interface deformation on cold pressure bonding of aluminum single crystals in ultra-high vacuum;Funakubo;J. Jpn. Inst. Metals,1982

2. TEM observations of Al and Cu interfaces bonded at room temperature by means of surface activation method;Suga;J. Jpn. Inst. Metal,1990

3. Structure of Al-Al and Al-Si3N4 interfaces bonded at room temperature by means of surface activation method;Suga;Acta Metall. Mater.,1992

4. Surface activated bonding—an approach to joining at room temperature;Suga;Ceram. Trans,1993

5. Electronic structure of metal/ceramic interfaces fabricated by “Surface Activated Bonding”;Ohuchi;Trans. MRS Jpn,1994

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