Historical review of semiconductor memories-Reference-Cited by-同舟云学术

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Historical review of semiconductor memories

Published:2022 Issue: Volume: Page:1-26
ISSN:
Container-title:Semiconductor Memories and Systems
language:
Short-container-title:

Author:

Bez Roberto,Fantini Paolo,Pirovano Agostino

Publisher

Elsevier

Reference62 articles.

1. R. Dennard, US Patent 3’387’286 (n.d.).

2. A floating-gate and its application to memory devices;Kahng;Bell Syst. Tech. J.,1967

3. F. Masuoka, H. Iizuka, US Patent 4’531’203 (n.d.).

4. A new flash E2PROM cell using triple polysilicon technology;Masuoka,1984

5. VLSI Memory Chip Design;Itoh,2001

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Local bandgap narrowing in the forming state of threshold switching materials;Applied Physics Letters;2024-07-08

2. Vertical Channel Transistor (VCT) as Access Transistor for Future 4F² DRAM Architecture;2023 IEEE International Memory Workshop (IMW);2023-05

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