SRAM technology status and perspectives

Author:

Ryckaert Julien,Weckx Pieter,Salahuddin Shairfe Muhammad

Publisher

Elsevier

Reference52 articles.

1. A 3-GHz 70-mb SRAM in 65-nm CMOS technology with integrated column-based dynamic power supply;Zhang;IEEE J. Solid State Circuits,2006

2. A 153Mb-SRAM design with dynamic stability enhancement and leakage reduction in 45nm high-Κ metal-gate CMOS technology;Hamzaoglu,2018

3. A 4.6GHz 162Mb SRAM design in 22nm tri-gate CMOS technology with integrated active VMIN-enhancing assist circuitry;Karl,2012

4. A 0.6 V, 1.5 GHz 84 Mb SRAM in 14 nm FinFET CMOS technology with capacitive charge-sharing write assist circuitry;Karl;IEEE J. Solid State Circuits,2016

5. A 23.6Mb/mm2 SRAM in 10nm FinFET technology with pulsed PMOS TVC and stepped-WL for low-voltage applications;Guo,2018

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Improved Stability for Robust and Low-Power SRAM Cell using FinFET Technology;Journal of Circuits, Systems and Computers;2023-10-28

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