Memory characteristics and mechanisms in transistor-based memories-Reference-Cited by-同舟云学术

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Memory characteristics and mechanisms in transistor-based memories

Published:2020 Issue: Volume: Page:53-73
ISSN:
Container-title:Photo-Electroactive Nonvolatile Memories for Data Storage and Neuromorphic Computing
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Author:

Xu Wentao,Ni Yao

Publisher

Elsevier

Reference56 articles.

1. Polymer and organic nonvolatile memory devices;Heremans;Chem. Mater.,2011

2. Towards the development of flexible non-volatile memories;Han;Adv. Mater.,2013

3. The strong continuous induction effect based on isotype heterojunction transistors with different polymer modifications;Ni;Org. Electron.,2019

4. Mechanical strain induced changes in electrical characteristics of flexible, non-volatile ferroelectric OFET based on memory;Thuau;Org. Electron.,2017

5. A floating gate and its application to memory devices;Kahng;Bell Syst. Tech. J.,1967

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