Ultra-High-Speed GaAs VLSI: Approaches, Potential, and Progress* *The planar LSI SDFL GaAs integrated circuit work at Rockwell International was supported in part by the Advanced Research Projects Agency of the Department of Defense and was monitored by the Air Force Office of Scientific Research under Contract F49620–77-C-0087.

Author:

EDEN RICHARD C.,WELCH BRYANT M.

Publisher

Elsevier

Reference23 articles.

1. The prospects for ultrahigh-speed VLSI GaAs digital logic;Eden;IEEE Trans. Electron Devices,1979

2. GaAs digital integrated circuits for ultra high speed LSI/VLSI;Eden,1980

3. Takashi, M., Gigabit Logic Operation with Enhancement-Mode GaAs MESFET IC's, presented at IEEE MTT-S workshop on Gigabit Logic for Microwave Systems (May 1980).

4. High-speed enhancement-mode GaAs MESFET logic;Mizutani;IEEE Trans. Microwave Theory Tech.,1980

5. A new field-effect transistor with selectively doped GaAs/n-AlxGa1–xAs heterojunctions;Mimura;Jpn. J. Appl. Phys. Lett.,1980

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