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High-Speed Resonant-Tunneling Diodes

Published:1994 Issue: Volume: Page:305-350
ISSN:0736-7031
Container-title:VLSI Electronics Microstructure Science
language:
Short-container-title:

Author:

BROWN E.R.

Publisher

Elsevier

Reference107 articles.

1. Quantum-effect devices;Capasso,1990

2. “Hot Electrons in Semiconductor Nanostructures: Physics and Applications”;Yokoyama,1992

3. See Chapter 11 by A. C. Seabaugh and M. A. Reed.

4. Superlattice and Negative Differential Conductivity in Semiconductors

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Accurate Quantum Transport Modeling of High-Speed In_0.53Ga_0.47As/AlAs Double-Barrier Resonant Tunneling Diodes;IEEE Transactions on Electron Devices;2022-08

2. Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review;IEEE Transactions on Terahertz Science and Technology;2022-05

3. Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time;Applied Physics Letters;2015-10-12

4. Formation of Si/SiC heterostructures for silicon-based quantum devices using single CH3SiH3-gas source free jet;MRS Proceedings;2004

5. Tunnel Diodes;digital Encyclopedia of Applied Physics;2003-04-15

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