Polarity determination of III–V compound semiconductors by large-angle convergent beam electron diffraction
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. H3PO4 — etching of {001}-faces of InP, (GaIn)P, GaP, and Ga(AsP)
2. Surface kinetics of metalorganic vapor-phase epitaxy: surface diffusion, nucleus formation, sticking at steps
3. Effect of Crystal Perfection and Polarity on Absorption Edges Seen in Bragg Diffraction
4. MOVPE-grown GaN on polar planes of 6H-SiC
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1. Anisotropic atomistic evolution during the sublimation of polar InAs nanowires;Nanoscale;2019
2. Diffusion and Defect Phenomena in III-V Semiconductors and their Investigation by Transmission Electron Microscopy;Diffusion Foundations;2018-07
3. Unified polarity analysis of <110> and <001> Sphalerite-type crystal samples using Bragg-line contrast rules;Microscopy of Semiconducting Materials 2003;2018-01-10
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