Experimental evidence for the third level (А+) of Hg vacancy in Hg1−xCdxTe

Author:

Shepelskii G.A.,Strikha M.V.,Gassan-zade S.G.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Infrared detectors: an overview;Rogalski;Infrared Phys. Technol.,2002

2. Relaxations and bonding mechanism in Hg1−xCdxTe with mercury vacancy defect: first-principles study;Sun;Phys. Rev. B,2006

3. Electronic properties and chemical trends of the arsenic in situ impurities in Hg1−xCdxTe: first-principles study;Sun;Phys. Rev. B,2007

4. X. Chen, L. Sun, H. Duan, Y. Huang, W. Lu, Electronic properties and bonding mechanism of the mercury vacancy and arsenic impurities in Hg1−xCdxTe, in: T. Frias, V. Maestas, Bulk Materials: Research, Technology and Applications, vol. 307, 2010.

5. Defect structure of Cd(x)Hg(1−x)Te films grown by liquid-phase epitaxy studied by means of low-energy Ion treatment;Izhnin;Semiconductors,2011

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