Improvement in performance of high-operating temperature HgCdTe photodiodes-Reference-Cited by-同舟云学术

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Improvement in performance of high-operating temperature HgCdTe photodiodes

Published:2011-05 Issue:3 Volume:54 Page:310-315
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Madejczyk P.,Gawron W.,Piotrowski A.,Kłos K.,Rutkowski J.,Rogalski A.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. HgCdTe infrared detector material: history, status and outlook

2. Progress in MOVPE of HgCdTe for advanced infrared detectors

3. Doping studies in MOVPE-grown CdxHg1-xTe

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 2DMaterial‐Based Photodetectors for Imaging;Optical Imaging and Sensing;2023-08-30

2. Photoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm;Journal of Electronic Materials;2023-06-28

3. Simulation of the Influence of Absorber Thickness and Doping Concentration on Non-equilibrium Photovoltaic Long-Wavelength HgCdTe Infrared Detectors;Journal of Electronic Materials;2023-04-27

4. Future Aspects of MOCVD Technology for Epitaxial Growth of Semiconductors;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

5. Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well;Chinese Physics B;2018-04

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