Structure design of amorphous silicon thin film transistor used as uncooled infrared sensors-Reference-Cited by-同舟云学术

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Structure design of amorphous silicon thin film transistor used as uncooled infrared sensors

Published:2007-03 Issue:1 Volume:50 Page:47-50
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Liu Xing-ming,Han Lin,Liu Li-tian

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Thermal behavior of amorphous silicon thin film transistor and its application to micromachined uncooled infrared sensors;Dong;Int. J. Infrared Milli. Waves,2003

2. W.J. Zeng, G. Karunasiri, S.J. Chua, Fabrication of microbolometer infrared focal plane array, in: Proceeding of MINDEF-NUS Joint R&D Seminar, vol. 8, 1997, pp. 148–151.

3. High-performance infrared thermal imaging with monolithic silicon focal planes operating at room temperature;Wood;IEDM Tech. Dig.,1993

4. An uncooled microbolometer infrared detector based on poly-SiGe thermistor;Liang;Sens. Actuator.,2003

5. Thin film resistance bolometer IR detectors;Liddiard;Infrared Phys.,1984

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1. Graphene/Ba0.7Sr0.3TiO3 heterostructure for uncooled infrared detectors;Materials Letters;2021-12

2. Characterizations of evaporated α-Si thin films for MEMS application;Applied Physics A;2013-12-21

3. Back channel etch chemistry of advanced a-Si:H TFTs;Microelectronic Engineering;2011-03

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