Characteristics of high responsivity 8.5μm InGaAs/InP QWIPs grown by metalorganic vapour phase epitaxy-Reference-Cited by-同舟云学术

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Characteristics of high responsivity 8.5μm InGaAs/InP QWIPs grown by metalorganic vapour phase epitaxy

Published:2007-04 Issue:2-3 Volume:50 Page:206-210
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Arora B.M.,Majumdar A.,Shah A.P.,Gokhale M.R.,Ghosh S.,Bhattacharya A.,Sengupta D.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Quantum‐well infrared photodetectors

2. The Physics of Quantum Well Infrared Photodetectors;Choi,1997

3. InGaAs/InP long wavelength quantum well infrared photodetectors

4. Long-wavelength quantum-well infrared detectors based on intersubband transitions in InGaAs/InP quantum wells

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Progress in Infrared Photodetectors Since 2000;Sensors;2013-04-16

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