The reverse current temperature dependences of SWIR CdHgTe “p-on-n” and “n-on-p” junctions-Reference-Cited by-同舟云学术

The reverse current temperature dependences of SWIR CdHgTe “p-on-n” and “n-on-p” junctions

Published:2015-11 Issue: Volume:73 Page:312-315
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Kovchavtsev A.P.,Guzev A.A.,Tsarenko A.V.,Panova Z.V.,Yakushev M.V.,Marin D.V.,Varavin V.S.,Vasilyev V.V.,Dvoretsky S.A.,Sabinina I.V.,Sidorov Yu.G.

Funder

Ministry of Education of the Russian Federation

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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3. R. Bommena, J.D. Bergeson, R. Kodama, J. Zhao, S. Ketharanathan, H. Schaake, H. Shih, S. Velicu, F. Aqariden, P.S. Wijewarnasuriya, N.K. Dhar, High Performance SWIR HgCdTe FPA Development on silicon substrate, Proc. SPIE, 9070, 907009-1.

4. H. Figgemeier, M. Benecke, K. Hofmann, R. Oelmaier, A. Sieck, J. Wendler, J. Ziegler, SWIR detectors for night vision at AIM, Proc. SPIE, 9070, 907008-1.

5. Large-format 0.85–2.5Micron HgCdTe detector arrays for low-background applications;Love;Proc. SPIE,2004

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