Mn-impurity-conduction-mediated ferromagnetic ordering in Ga1−xMnxAs (x=0.034 and x=0.050)
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference43 articles.
1. Diluted magnetic III-V semiconductors
2. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
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Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Ferromagnetism and infrared electrodynamics of Ga1−xMnxAs;Physical Review B;2013-05-29
2. Electron spin dynamics of ferromagnetic Ga1−x Mnx As across the insulator-to-metal transition;Applied Physics Letters;2013-03-11
3. Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices;Physical Review B;2012-10-01
4. Infrared probe of the insulator-to-metal transition inGa1−xMnxAsandGa1−xBexAs;Physical Review B;2011-08-26
5. Observation of Insulating Nanoislands in Ferromagnetic GaMnAs;Physical Review Letters;2009-06-22
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