Ar+ ion milling of InSb for manufacturing single electron devices-Reference-Cited by-同舟云学术

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Ar+ ion milling of InSb for manufacturing single electron devices

Published:2009-07 Issue:4 Volume:52 Page:113-118
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Simchi H.,Raastgoo M.,Ranjbar A.,Barzekar T.,Qasempour M.,Daaraei M.,Mahmoodzadeh E.,Saani M.H.,Mohammadnejad Sh.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Electron technology;Papis-Polakowska;Int. J.,2005

2. Digital etching of GaAs: New approach of dry etching to atomic ordered processing

3. Beam Assisted Atomic Layer Controlled Epitaxy and Etching of GaAs

4. Molecular dynamics simulation of atomic layer etching of silicon

5. Realization of atomic layer etching of silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InSb Photodiodes (Review, Part II);Optoèlektronika i poluprovodnikovaâ tehnika;2016-12-30

2. 60 keV Ar+-ion induced modification of microstructural, compositional, and vibrational properties of InSb;Journal of Applied Physics;2014-10-14

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