Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm-Reference-Cited by-同舟云学术

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Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm

Published:2020-03 Issue: Volume:105 Page:103182
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Varavin V.S.,Sabinina I.V.,Sidorov G.Yu.,Marin D.V.,Remesnik V.G.,Predein A.V.,Dvoretsky S.A.,Vasilyev V.V.,Sidorov Yu.G.,Yakushev M.V.,Latyshev A.V.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Electrical doping of HgCdTe by ion implantation and heat treatment;Destefanis;J. Cryst. Growth,1988

2. HgCdTe technology in Germany – the past, the present and the future;Cabanski;Proc. of SPIE,2009

3. LW IRFPAs made from HgCdTe grown by MOVPE for use in Multispectral Imaging;Hipwood;Proc. SPIE,2008

4. Progress of MCT detector technology at AIM towards smaller pitch and lower dark current;Eich;J. Elec. Materi.,2017

5. Small pixel pitch MCT IR-modules;Lutz;Proc. SPIE,2016

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3. Molecular-beam epitaxy-grown HgCdTe infrared detector: Material physics, structure design, and device fabrication;Science China Physics, Mechanics & Astronomy;2023-02-10

4. HgCdTe Device Technology;Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors;2023

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