InAs/GaAs quantum dot and dots-in-well infrared photodetectors based on p -type valence-band intersublevel transitions-Reference-Cited by-同舟云学术

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InAs/GaAs quantum dot and dots-in-well infrared photodetectors based on p -type valence-band intersublevel transitions

Published:2015-05 Issue: Volume:70 Page:15-19
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Unil Perera A.G.,Lao Yan-Feng,Wolde Seyoum,Zhang Y.H.,Wang T.M.,Kim J.O.,Schuler-Sandy Ted,Tian Zhao-Bing,Krishna S.S.

Funder

U.S. National Science Foundation

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. The theory of quantum-dot infrared phototransistors;Ryzhii;Semicond. Sci. Technol.,1996

2. Three-color (λp1∼3.8μm, λp2∼8.5μm, and λp3∼23.2μm) InAs/InGaAs quantum-dots-in-a-well detector;Krishna;Appl. Phys. Lett.,2003

3. Systematic study of different transitions in high operating temperature quantum dots in a well photodetectors;Barve;Appl. Phys. Lett.,2010

4. Wavelength agile superlattice quantum dot infrared photodetector;Ariyawansa;Appl. Phys. Lett.,2009

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2. 低维铟基阱－点复合量子结构及光学性能和应用前景;Chinese Journal of Lasers;2022

3. Investigation of electronic transport in InAs/GaAs samples. A study using the metaheuristic self-adaptive differential evolution method;Physica B: Condensed Matter;2021-11

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