Low dark current P- InAsSbP /n- InAs/N-InAsSbP/n + - InAs double heterostructure back-side illuminated photodiodes-Reference-Cited by-同舟云学术

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Low dark current P- InAsSbP /n- InAs/N-InAsSbP/n + - InAs double heterostructure back-side illuminated photodiodes

Published:2016-05 Issue: Volume:76 Page:542-545
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Brunkov P.N.,Il’inskaya N.D.,Karandashev S.A.,Karpukhina N.G.,Lavrov A.A.,Matveev B.A.,Remennyi M.A.,Stus’ N.M.,Usikova A.A.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. New concepts in infrared photodetector designs;Martyniuk;Appl. Phys. Rev.,2014

2. A3B5 photodiode sensors for low-temperature pyrometry;Sotnikova;Proc. SPIE,2011

3. InAs photodiodes for 3.43 um radiation thermometry;Zhou;IEEE Sens. J.,2015

4. Optical gas sensing: a review;Hodgkinson;Meas. Sci. Technol.,2013

5. Study of current leakage in InAs p–i–n photodetectors;Lin;J. Vac. Sci. Technol., B,2000

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoreflectance Analysis of InAsPSb/InGaAs Multi-Quantum Well LED Structures with Different Well/Barrier Numbers;Photonics;2024-03-21

2. Investigation of surface morphology of InAs1-x-ySbxPy epilayers grown by liquid phase epitaxy;Journal of Crystal Growth;2020-03

3. Substrate-removed flip-chip photodiode array based on InAsSbP/InAs double heterostructure;Journal of Physics: Conference Series;2019-12-01

4. Liquid phase epitaxy growth and photoluminescence of InAs1−x−ySbxPy epilayer;Materials Research Express;2019-05-31

5. Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures;Semiconductors;2017-02

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