Two excitation pathways of Pr3+ ion emission in HfO2:Si:Pr films depending on crystalline phase transformations in annealing-Reference-Cited by-同舟云学术

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Two excitation pathways of Pr3+ ion emission in HfO2:Si:Pr films depending on crystalline phase transformations in annealing

Published:2023-06 Issue: Volume:258 Page:119789
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Garcia Andrade M.A.,Torchynska T.^ORCID,Casas Espinola J.L.,Velázquez Lozada E.,Polupan G.,Khomenkova L.,Gourbilleau F.

Funder

National Council for Science and Technology

Instituto Politécnico Nacional

Ministry of Higher Education Scientific Research and Innovation

Consejo Nacional de Ciencia y Tecnología

National Academy of Sciences of Ukraine

Secretaría de Investigación y Posgrado, Instituto Politécnico Nacional

Swine Innovation Porc

Ministry of Education and Science of Ukraine

Agence Nationale de la Recherche

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference35 articles.

1. Integrations, and challenges of novel high-k gate stacks in advanced CMOS technology;He;Prog. Mater. Sci.,2011

2. Thermal stability of high-k Si-rich HfO2 layers grown by RF magnetron sputtering;Khomenkova;Nanotechnology,2010

3. Sol-gel Er-doped SiO2–HfO2 planar waveguides: a viable system for 1.5 μm application;Gonçalves;Appl. Phys. Lett.,2002

4. Raman and Er3+ spectroscopy of hafnia single crystals and nanocrystals;Mattarelli;Opt. Mater.,2009

5. Amorphous hafnium oxide thin films for antireflection optical coatings;Khoshman;Surf. Coat. Technol.,2008

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