Luminescence properties of InAs quantum dots formed by a modified self-assembled method
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference30 articles.
1. Gain and the threshold of three-dimensional quantum-box lasers
2. Multidimensional quantum well laser and temperature dependence of its threshold current
3. High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents
4. The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers
5. Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theory
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1. Temperature-dependent Luminescence Properties of Digital-alloy In(Ga1−zAlz)As;Applied Science and Convergence Technology;2018-05-31
2. Luminescence properties of InP/InGaP quantum structures grown by using a migration-enhanced epitaxy at different growth temperatures;Journal of the Korean Physical Society;2017-04
3. Photoluminescence Studies of InP/InGaP Quantum Structures Grown by a Migration Enhanced Molecular Beam Epitaxy;Applied Science and Convergence Technology;2016-07-30
4. Optical Properties of InP/InGaP Quantum Structures Grown by a Migration Enhanced Epitaxy with Different Growth Cycles;Applied Science and Convergence Technology;2015-05-30
5. Effect of an InGaP spacer layer on the luminescence properties of InP/InGaP quantum structures;Journal of the Korean Physical Society;2015-03
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