Thermoluminescence properties and trapping parameters of TlGaS2 single crystals
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference29 articles.
1. Electronic properties and phase transitions in low-dimensional semiconductors;Panich;J. Phys. Condens. Matter,2008
2. Dielectric permittivity and relaxation process investigation of C-doped TlInS2 crystals;Samedov;Mod. Phys. Lett. A,2021
3. The effect of Ga/In ratio and annealing temperature on the nonlinear absorption behaviors in amorphous TlGaxIn1-xS2 (0 ≤ x ≤ 1) chalcogenide thin films;Unlu;Opt. Laser. Technol.,2020
4. Effect of thallium (Tl) substitution for indium (In) on ellipsometric characteristics of TlInSe2 single crystals;Isik;Mater. Sci. Semicond. Process.,2021
5. Modifying the dielectric properties of the TlGaS2 single crystal by electron irradiation;Asadov;Russ. Microelectron.,2020
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1. Thickness dependence of dielectric properties of TlGaS2 thin films;Materials Science in Semiconductor Processing;2023-11
2. UV irradiated thermally stimulated luminescence investigation of SrWO4: Pr3+ phosphor;Solid State Communications;2023-11
3. Study of the structural and optical properties of thallium gallium disulfide (TlGaS2) thin films grown via thermal evaporation;Physica Scripta;2022-06-09
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