Electroluminescence in narrow-gap semiconductors CdHgTe under interband breakdown in an electric field-Reference-Cited by-同舟云学术

Electroluminescence in narrow-gap semiconductors CdHgTe under interband breakdown in an electric field

Published:2021-12 Issue: Volume:240 Page:118409
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Nozdrin Yu.N.,Okomel'kov A.V.^ORCID,Arkhipova E.A.,Kraev S.A.^ORCID,Varavin V.S.^ORCID

Funder

Institute for Physics of Microstructures Russian Academy of Science

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference8 articles.

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2. “Stimulated emission from optically excited CdxHg1 – xTe structures at room temperature”;Andronov;J. Lumin.,2012

3. Simultaneous stimulated emission at two frequencies from CdxHg1-xTe semiconducting structure”;Nozdrin;J. Luminescence,2014

4. Hot carriers in narrow-gap semiconductors in a strong electric field”;Genkin,1989

5. Time resolved photoluminescence spectroscopy of narrow gap Hg 1−x Cd x Te/Cd y Hg 1−y Te quantum well heterostructures;Rumyantsev;Appl. Phys. Lett.,2014

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