Neutral, charged excitons and biexcitons in strain-free and asymmetric GaAs quantum dots fabricated by local droplet etching-Reference-Cited by-同舟云学术

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Neutral, charged excitons and biexcitons in strain-free and asymmetric GaAs quantum dots fabricated by local droplet etching

Published:2018-05 Issue: Volume:197 Page:47-55
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Trabelsi Z.,Yahyaoui M.,Radhia S. Ben,Boujdaria K.,Zallo E.,Schmidt O.G.,Atkinson P.,Chamarro M.,Testelin C.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference30 articles.

1. Magnetospectroscopy of excited states in charge-tunable GaAs/AlGaAs [111] quantum dots

2. Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

3. Dark-Bright Mixing of Interband Transitions in Symmetric Semiconductor Quantum Dots

4. Cross-sectional transmission electron microscopy of GaAs quantum dots fabricated by filling of droplet-etched nanoholes

5. Single-dot Spectroscopy of GaAs Quantum Dots Fabricated by Filling of Self-assembled Nanoholes

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spatially-resolved emission of GaAs/AlGaAs quantum dots grown by nanohole-filled droplet epitaxy;Physical Review B;2023-11-27

2. Fine structure of bright and dark excitons in asymmetric droplet epitaxy GaAs/AlGaAs quantum dots;Physical Review B;2021-02-09

3. Band structure engineering in strain-free GaAs mesoscopic systems;Nanotechnology;2020-04-03

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