Light emitting diode based on n-Zn0.94M0.06O nanorods/p-GaN (M= Cd and Ni) heterojunction under forward and reverse bias-Reference-Cited by-同舟云学术

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Light emitting diode based on n-Zn0.94M0.06O nanorods/p-GaN (M= Cd and Ni) heterojunction under forward and reverse bias

Published:2015-04 Issue: Volume:160 Page:305-310
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Echresh Ahmad,Oeurn Chey Chan,Zargar Shoushtari Morteza,Nur Omer,Willander Magnus

Funder

Linkoping University

Shahid Chamran University of Ahvaz

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference27 articles.

1. Enhanced performances of InGaN/GaN-based blue LED with an ultra-thin inserting layer between GaN barriers and InGaN wells

2. Sensing devices based on ZnO hexagonal tube-like nanostructures grown on p-GaN heterojunction by wet thermal evaporation

3. ZnO nanorod based low turn-on voltage LEDs with wide electroluminescence spectra

4. Enhanced UV absorbance and photoluminescence properties of ultrasound assisted synthesized gold doped ZnO nanorods

5. Effect of growth angle and post-growth annealing on the structural and optical properties of ZnO nanorods grown hydrothermally on p-Si substrate

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of temperature on hydrothermally grown high-quality single-crystals Mg-doped ZnO nanorods for light-emitting diode application;Journal of Luminescence;2017-12

2. The optical properties of Ag/ZnO nanocomposite thin films with different thickness;Optik;2017-10

3. ZnO-based deep-ultraviolet light-emitting devices;Chinese Physics B;2017-04

4. High photocurrent gain in NiO thin film/M-doped ZnO nanorods (M=Ag, Cd and Ni) heterojunction based ultraviolet photodiodes;Journal of Luminescence;2016-10

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