Temperature dependence of electroluminescence from Si-based light emitting diodes with β-FeSi2 particles active region
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
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2. For a recent review see V.E. Borisenko, Semiconducting silicides, 1st ed, Springer, Berlin, 2000.
3. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm
4. Aggregation of Monocrystalline β-FeSi 2 by Annealing and by Si Overlayer Growth
5. β‐FeSi2in (111)Si and in (001) Si formed by ion‐beam synthesis
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1. Semiconducting beta-phase FeSi2 for light emitting diode applications: Recent developments, challenges, and solutions;Thin Solid Films;2013-06
2. Semiconducting silicide photonic devices;SPIE Proceedings;2007-09-09
3. Photoluminescence decay time and electroluminescence of p-Si∕β-FeSi2 particles∕n-Si and p-Si∕β-FeSi2 film∕n-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy;Journal of Applied Physics;2007-06-15
4. Epitaxial growth and luminescence characterization of Si/β-FeSi2/Si multilayered structures by molecular beam epitaxy;Journal of Crystal Growth;2007-04
5. Epitaxial Growth and Luminescence Characterization of Si-based Double Heterostructures Light-emitting Diodes with Iron Disilicide Active Region;MRS Proceedings;2006
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