Binding energy and dynamics of Be acceptor levels in AlAs/GaAs multiple quantum wells-Reference-Cited by-同舟云学术

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Binding energy and dynamics of Be acceptor levels in AlAs/GaAs multiple quantum wells

Published:2004-06 Issue:1-4 Volume:108 Page:181-184
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Halsall M.P.,Zheng W.-M.,Harrison P.,Wells J.-P.R.,Steer M.J.,Orlova E.E.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference8 articles.

1. Direct observation of the LO phonon bottleneck in wide GaAs/AlxGa1−xAs quantum wells

2. Intersubband relaxation lifetimes in p-GaAs/AlGaAs quantum wells below the LO-phonon energy measured in a free electron laser experiment

3. Far-infrared stimulated emission from optically excited bismuth donors in silicon

4. Saturation absorption studies of intersubband relaxation rates in a p-GaAs/AlGaAs QW using a free electron laser

5. Energy states of Be in GaAs

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic and optical properties of a nanoring in the presence of external magnetic field;Superlattices and Microstructures;2012-06

2. Optical properties in a two-dimensional quantum ring: Confinement potential and Aharonov–Bohm effect;Optics Communications;2011-12

3. Terahertz electroluminescence from Be δ-doped GaAs/AlAs quantum well;Applied Physics Letters;2010-07-12

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