Light-emitting defects formed in GeO/SiO2 heterostructures with assistance of swift heavy ions-Reference-Cited by-同舟云学术

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Light-emitting defects formed in GeO/SiO2 heterostructures with assistance of swift heavy ions

Published:2019-03 Issue: Volume:207 Page:209-212
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Cherkova S.G.,Volodin V.A.,Skuratov V.A.,Stoffel M.,Rinnert H.,Vergnat M.

Funder

ISP SB RAS

Université de Lorraine

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference38 articles.

1. A review on Ge nanocrystals embedded in SiO2 and high-k dielectrics;Lehninger;Phys. Status Solidi A,2018

2. Recent advances in germanium nanocrystals: synthesis, optical properties and applications;Carolan;Prog. Mater. Sci.,2017

3. Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories;Akca;Appl. Phys. Lett.,2008

4. Mechanism of GeO2 resistive switching based on the multi-phonon assisted tunneling between traps;Shaposhnikov;Appl. Phys. Lett.,2012

5. Silicon, Germanium and their Alloys: Growth, Defects, Impurities and Nanocrystals;Kissinger,2015

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1. Toward White Light Random Lasing Emission Based on Strained Nano Polygermanium Doped with Tin via Metal-Induced Crystallization (MIC);Crystal Growth & Design;2022-12-30

2. Application of Alumina-Based Ceramic Paste for High-Temperature Electronics Packaging;Journal of Electronic Packaging;2021-02-22

3. Infrared photoluminescence from GeO[SiO2] and GeO[SiO] solid alloy layers irradiated with swift heavy Xe ions;Journal of Luminescence;2020-07

4. Preparation and photochemical properties of Sb3Nb3O13 nanoparticles and the derived semiconductor heterojunctions;Journal of Luminescence;2020-04

5. Poly-silicon light-emitting-device based electro-optical interfaces in standard silicon-CMOS integrated circuitry;Optical Materials;2020-04

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