Influence of the SiO thickness on the photoluminescence properties of Er-doped SiO/SiO2 multilayers
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference12 articles.
1. Erbium implanted thin film photonic materials
2. 1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+
3. Intense visible photoluminescence in amorphous SiOx and SiOx:H films prepared by evaporation
4. Photoluminescence and electroluminescence of size-controlled silicon nanocrystallites embedded in SiO2 thin films
5. Confinement effects in crystallization and Er doping of Si nanostructures
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The effect of deposition RF power on the SiC passivation layer synthesized by an RF magnetron sputtering method;Journal of Crystal Growth;2011-07
2. Vibrational Spectroscopy of Sulfur-Containing Silicon-Rich Silicon-Oxide Films Fabricated via a Coevaporation Technique;Journal of the Korean Physical Society;2009-03-14
3. Influence of Si crystallization evolution on 1.54 μm luminescence in Er-doped Si/Al2O3 multilayer;Acta Physica Sinica;2009
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