1. An analysis of the switching performance and robustness of power MOSFETs body diodes: A technology evaluation;Jahdi;IEEE Trans. Power Electron.,2015
2. Kadavelugu , A., Raheja , U., Mobarrez , M., Aeloiza, E., Rodrigues, R., 2019. SiC versus Si freewheeling diodes: a comparative study of their impact on IGBT VCE overshoot in 3-level T-type power converters. In: Proceedings of the 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Raleigh, NC, USA, 2019. pp. 219–224.
3. A comparative study of freewheeling methods for eGaN HEMTs in a phase-leg configuration;Qin;IEEE J. Emerg. Sel. Top. Power Electron.,2021
4. Analysis and suppression of turn-on current spike of SiC MOSFET;Sun;J. Power Electron.,2020
5. Tiwari , S., Abuishmais , I., Langelid , J.K., Lund , R., Midtgård, O.M., Undeland, T.M., 2018. Characterization of body diodes in the-state-of-the-art SiC FETs are they good enough as freewheeling diodes?. In: Proceedings of the 2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe), Riga, Latvia, pp. 1–10.