Characterization and optimization of gate driver turn-off voltage for eGaN HEMTs in a phase-leg configuration
Author:
Funder
National Natural Science Foundation of China
State Key Laboratory of Wide Bandgap Semiconductor Power Electronic Devices
Publisher
Elsevier BV
Subject
General Energy
Reference20 articles.
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2. Wide bandgap devices in AC electric drives: Opportunities and challenges;Morya;IEEE Trans Transp Electr,2019
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4. L. Fu, X. Zhang, M. Scott, C. Yao, J. Wang, The evaluation and application of wide bandgap power devices. In: Proceeding of the 2014 IEEE conference and expo transportation electrification asia-pacific. 2014. p. 1–5.
5. E.A. Jones, F. Wang, B. Ozpineci, Application based review of GaN HFETs. In: Proceeding of the 2014 IEEE workshop on wide bandgap power devices and applications, 2014 p. 24–9.
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