The interface effect on the I–V curves and analysis of ionic diffusion coefficients of polycrystalline CuIn4Te6
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference26 articles.
1. Defect chemistry of Cu2−yO at elevated temperatures. Part I: Non-stoichiometry, phase width and dominant point defects
2. Defect chemistry of Cu2−yO at elevated temperatures. Part II: Electrical conductivity, thermoelectric power and charged point defects
3. Preparation of oxide thin films by controlled diffusion of oxygen atoms
4. Semi-Conductors with Mobile Ions Show a New Type of I-V Relations
5. Solid state devices based on thin films of Cu2O show a new type of I?V relations
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1. Diffusion coefficients and I–V curves of solid state devices based on single crystals of the Cu–Ag–In–Se system with ionic motion;Solid State Ionics;2014-11
2. Tuning SnO2–TiO2 tandem systems for dyes mineralization;Applied Catalysis B: Environmental;2014-04
3. Effects of ultraviolet illumination and temperature on ionic motion in single-crystalline CuIn2Te3.5;Solid State Ionics;2013-11
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