Investigation of n-doping in CVD diamond using gap states spectroscopy-Reference-Cited by-同舟云学术

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Investigation of n-doping in CVD diamond using gap states spectroscopy

Published:1996-07 Issue:9 Volume:5 Page:1006-1011
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Nesládek M.,Meykens K.,Stals L.M.,Quaeyhaegens C.,D'Olieslaeger M.,Wu T.D.,Vaněček M.,Rosa J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. n-type dopants and conduction-band electrons in diamond: Cluster molecular-orbital theory

2. Impurity incorporation and doping of diamond

3. Phosphorus incorporation in plasma deposited diamond films

4. Growth of phosphorus and nitrogen co-doped diamond films

5. Doping of diamond

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bonding, Thermal and Ambient Stability of Nitrogen-Terminated Diamond (100) Surfaces by Plasma Exposure Studied by Ex-Situ XPS, HREELS, and DFT Modeling;Topics in Applied Physics;2024

2. Influence of Different Nitrogen Plasmas Exposures of H‐Diamond (100) Surfaces on Ambient Oxygen Adsorption, Nitrogen Bonding, and Thermal Stability Studied by X‐Ray Photoelectron Spectroscopy;physica status solidi (a);2023-08-02

3. Diamond for Particle and Photon Detection in Extreme Conditions;Comprehensive Hard Materials;2014

4. Theoretical models for doping diamond for semiconductor applications;physica status solidi (b);2008-09

5. Deep levels in homoepitaxial boron-doped diamond films studied by capacitance and current transient spectroscopies;physica status solidi (a);2008-09

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