ELECTRON BEAM INDUCED DEFECTS AT Si-SiO2 INTERFACE-Reference-Cited by-同舟云学术

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ELECTRON BEAM INDUCED DEFECTS AT Si-SiO2 INTERFACE

Published:1980 Issue: Volume: Page:331-335
ISSN:
Container-title:The Physics of MOS Insulators
language:
Short-container-title:

Author:

Rosencher E.,Chantre A.,Bois D.

Publisher

Elsevier

Reference14 articles.

1. Electron-beam-induced-current investigations on MOS and MNOS devices

2. Comparison of interface‐state buildup in MOS capacitors subjected to penetrating and nonpenetrating radiation

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Space-Charge Layers at Semiconductor Interfaces;Crystalline Semiconducting Materials and Devices;1986

2. Characterization of the Si-SiO2 Interface;VLSI Electronics Microstructure Science;1985

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