1. Longitudinal Magnetoresistance in the Quantum Limit
2. Surface and interface depletion corrections to free carrier-density determinations by hall measurements
3. A review of the magneto-impurity effect in semiconductors
4. A model for the origin of the oscillatory structure in the reverse bias J(V) characteristics of n+GaAs/(AlGa)As/n-GaAs/n+GaAs tunnelling devices
5. Eaves, L., B. R. Snell, D. K. Maude, P. S. S. Guimaraes, D. C. Taylor, F. W. Sheard, G. A. Toombs, J. C. Portal, L. Dmowski, P. Claxton, G. Hill, M. A. Pate and S. J. Bass (1987). Proc. 18th International Conference on the Physics of Semiconductors, edited by O. Engström, World Scientific, Singapore, 1615.