Author:
Pelouard J-L.,Hesto P.,Castagné R.
Reference8 articles.
1. Analysis of d.c. characteristics of GaAlAsGaAs double heterojunction bipolar transistors
2. GaAs/(Ga,Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layers
3. Triple implant (In,Ga)As/InP n-p-n heterojunction bipolar transistors for integrated circuit applications
4. Goldstein, L., Praseuth, J-P., Pelouard, J-L., Hesto, P., (1986), 4th International Conference on Molecular Beam & Epitaxy, York, England
5. Hesto, P., Pône, J-F., Mouis, M., Pelouard, J-L., Castagné, R., (1985), NASECODE IV Conference, Dublin, Ireland