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LIGHT-EMITTING DIODE SURVEY

Published:1978 Issue: Volume: Page:183-214
ISSN:
Container-title:Luminescence and the Light Emitting Diode
language:
Short-container-title:

Author:

WILLIAMS E.W.,HALL R.

Publisher

Elsevier

Reference107 articles.

1. Characteristics of a GaAs spontaneous infrared source with 40 percent efficiency

2. Efficiency shift in very high efficiency GaP (Zn–O) diodes

3. S. I. Koyama, T. Kohisa and S. Suzuki, Annual Reliability and Maintainability Symp. Publ. IEEE, p.203 (1973).

4. R. Hall, R. E. Brown, J. R. Fitzpatrick, E. W. Williams, P. Porteus and M. G. Astles, Symposium on GaAs, publ. Inst. Physics, 177 (1972).

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxygen partial pressure dependence of the structural properties of CdO thin films deposited by a modified reactive vacuum evaporation process;Materials Chemistry and Physics;2005-02

2. The evolution of electroluminescence in Ge quantum-dot diodes with the fold number;Applied Physics Letters;2004-12-20

3. Effects of substrate orientation, temperature, and hole concentration on the bandgap energy of carbon-doped GaAs;Journal of Crystal Growth;2001-06

4. Light-emitting diodes;IEE Proceedings A Physical Science, Measurement and Instrumentation, Management and Education, Reviews;1980

5. Alphanumeric display;Proceedings of the Institution of Electrical Engineers;1978

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