Author:
(Skip) Egley J.L,Vandooren Anne,Winstead Brian,Verret Eric,Workman Chip,White Bruce,Nguyen Bich-Yen
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Fully-depleted SOI devices with TaSiN gate, HfO2 gate dielectric and elevated source/drain extensions;Vandooren;IEEE Electron Dev. Lett.,2003
2. Vandooren A. A 50 nm TiN gate fully-depleted SOI CMOS technology with HfO2 gate dielectric and elevated source/drain extensions. In: 2003 Silicon Nanoelectronics Workshop, June 8–9, Kyoto, Japan. p. 4–5
3. Vandooren A, Egley S, Zavala M, Franke A, Barr A, White T, et al. Ultra-thin body fully-depleted SOI devices with metal gate (TaSiN) gate, high K (HfO2) dielectric and elevated source/drain extensions. In: IEEE SOI Conference, 7–10 October 2002. p. 205
4. Duncan A. Ph.D. Dissertation, University of Illinois, 1996
5. Winstead B. Ph.D. Dissertation, University of Illinois, 2001
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献