Author:
Kanoun M.B,Merad A.E,Merad G,Cibert J,Aourag H
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference42 articles.
1. The Blue Laser Diode GaN based Light Emitters and Lasers;Nakamura,1997
2. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
3. Solozhenho VL. In: Edgar JH editor. Properties of Group III Nitrides, Electronic Materials Information Service (EMIS) Datareviews Series. Institution of Electrical Engineers, London, 1994
4. Porowski S, Grzegory I. In: Edgar JH editor. Properties of Group III Nitrides. INSPEC, London, 1994
5. Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxy
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