Author:
Flachowsky S.,Herrmann T.,Höntschel J.,Illgen R.,Ong S.Y.,Wiatr M.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. CMOS circuit performance enhancement by surface orientation optimization;Chang;IEEE Trans Electron Devices,2004
2. Mobility improvement for 45nm node by combination of optimized stress control and channel orientation design;Komoda;IEDM,2004
3. Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors;Sun;J Appl Phys,2007
4. Strained SiGe channels for band-edge PMOS threshold voltages with metal gates and high-k dielectrics;Gilmer;IEEE Trans Electron Devices,2010
5. SiGe channels for higher mobility CMOS devices;Naumann;Mater Res Soc Sympos Proc,2010
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献