A numerical study of scaling issues for trench power MOSFETs

Author:

Roig J.,Cortés I.,Jiménez D.,Flores D.,Iñiguez B.,Hidalgo S.,Rebollo J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Darwish M. Next generation semiconductors for DC-to-DC converters. In: Proc Bipolar/BiCMOS Circuits and Tech Meeting, 2003. p. 15–21

2. Morancho F, Tranduc H, Rossel P. The on-resistance limits of high cell density power MOSFET’s. In: Proc MIEL, 1997. p. 395–8

3. Ono S, Kawaguchi Y, Nakagawa A. 30V new fine trench MOSFET with ultra low on-resistance. In: Proc ISPSD, 2003. p. 28–31

4. Darwish M, Yue C, Lui KH, Giles F, Chan B, Chen KI, et al. A new power W-gated trench MOSFET (WMOSFET) with high switching performance. In: Proc ISPSD, 2003. p. 24–7

5. Gate–drain charge analysis for switching in power trench MOSFETs;Hueting;IEEE Trans Electron Dev,2004

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